A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
Campbell, C.
Lee, C.
Williams, V.
Ming-Yih Kao
Hua-Quen Tserng
Saunier, P.
Balisteri, T.
TriQuint Semicond., Richardson, TX, USA;
This paper appears in: Solid-State Circuits, IEEE Journal of
Publication Date: Oct. 2009
Volume: 44,
Issue: 10
On page(s): 2640-2647
ISSN: 0018-9200
INSPEC Accession Number: 10880538
Digital Object Identifier: 10.1109/JSSC.2009.2026824
Current Version Published: 2009-09-22
Abstract
The design and performance of a wideband power amplifier MMIC suitable for electronic warfare (EW) systems and other wide bandwidth applications is presented. The amplifier utilizes dual field plate 0.25- mum GaN on SiC device technology integrated into the three metal interconnect (3 MI) process flow. Experimental results for the MMIC at 30 V power supply operation demonstrate greater than 10 dB of small signal gain, 9 W to 15 W saturated output power and 20% to 38% peak power-added efficiency over a 1.5 GHz to 17 GHz bandwidth.
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