100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS
Li, J.C.
Elliott, K.R.
Matthews, D.S.
Hitko, D.A.
Zehnder, D.
Royter, Y.
Patterson, P.R.
Hussain, T.
Jensen, J.F.
Microelectron. Lab., HRL Labs. LLC, Malibu, CA, USA;
This paper appears in: Solid-State Circuits, IEEE Journal of
Publication Date: Oct. 2009
Volume: 44,
Issue: 10
On page(s): 2663-2670
ISSN: 0018-9200
INSPEC Accession Number: 10880526
Digital Object Identifier: 10.1109/JSSC.2009.2026819
Current Version Published: 2009-09-22
Abstract
Differential amplifiers incorporating the advantages of both Si and III-V technologies have been fabricated in a wafer scale, heterogeneously integrated, process using both 250 nm InP DHBTs and 130 nm CMOS. These ICs demonstrated gain-bandwidth product of 40-130 GHz and low frequency gain > 45 dB . The use of InP DHBTs supports a > 6.9 V differential output swing and a slew rate > 4 times 104V/mus to be achieved with as low as 40 mW dissipated power. A novel on-chip buffer circuit is used to facilitate the on-wafer characterization of these amplifiers. To the authors' knowledge, this is the first demonstration of a high performance IC building block in a heterogeneously integrated process technology.
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