Future of planar self-aligned block oxide based MOSFET technology

In this paper, we examine the current-voltage (IV) and capacitance-voltage (CV) characteristics of self-aligned (SA), planar block oxide (BO) metal-oxide semiconductor field-effect transistors (MOSFETs) using technology computer-aided design (TCAD) tools. For the first time, a comparison of the different types of BO MOSFETs, such as fully depleted silicon-on-insulator (FDSOI) FET with BO (bFDSOI), silicon-on-partial-insulator (SPI) FET with BO (bSPI), source/drain (S/D)-tied bFDSOI-FET, and multi-substrate contact (MSC) FET, is studied through numerical simulations. The preliminary results show that the substrate-tie transistors demonstrate diminished self-heating and poorer short-channel effects (SCEs) when compared to a non-substrate-tie transistor (bFDSOI). Self-heating and floating-body effects are specially related to the long-term reliability of bFDSOI devices. Hence, the tradeoff between performance and reliability is also shown in this paper.