A new design-for-test technique for SRAM core-cell stability faults
Ney, A.
Dilillo, L.
Girard, P.
Pravossoudovitch, S.
Virazel, A.
Bastian, M.
Gouin, V.
LIRMM, Univ. of Montpellier/CNRS, Montpellier;
Abstract
Core-cell stability represents the ability of the core-cell to keep the stored data. With the rapid development of semiconductor memories, their test is becoming a major concern in VDSM technologies. It provides information about the SRAM design reliability, and its effectiveness is therefore mandatory for safety applications. Existing core-cell stability design-for-test (DfT) techniques consist in controlling the voltage levels of bit lines to apply a weak write stress on the core-cell under test. If the core-cell is weak, the weak write stress induces the faulty swap of the core-cell. However, these solutions are costly in terms of area and test application time, and generally require modifications of critical parts of the SRAM (core-cell array and/or the structure generating the internal auto-timing). In this paper, we present a new DfT technique for stability fault detection. It consists in modulating the word line activation in order to perform an adjustable weak write stress on the targeted core-cell for stability fault detection. Compared to existing DfT solutions, the proposed technique offers many advantages: programmability, low area overhead, low test application time. Moreover, it does not require any modification of critical parts of the SRAM.
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