An overview of non-volatile memory technology and the implication for tools and architectures
Hai Li
Yiran Chen
Alternative Technol. Group, Seagate Technol. LLC, Bloomington, MN;
Abstract
Novel nonvolatile memory technologies are gaining significant attentions from semiconductor industry in the competition of universal memory development. We used spin-transfer torque random access memory (STT-RAM) and resistive random access memory (R-RAM) as examples to discuss the implication of emerging nonvolatile memory for tools and architectures. Three aspects, including device and memory cell modeling, device/circuit co-design consideration and novel memory architecture, are discussed in details. The goal of these discussions is to design a high-density, low-power, high-performance nonvolatile memory with simple architecture and minimized circuit design complexity.
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