Reliability aware through silicon via planning for 3D stacked ICs
Shayan, A.
Xiang Hu
He Peng
Chung-Kuan Cheng
Wenjian Yu
Popovich, M.
Toms, T.
Xiaoming Chen
CSE Dept., Univ. of California San Diego, San Diego, CA, USA;
Abstract
This work proposes reliability aware through silicon via (TSV) planning for the 3D stacked silicon integrated circuits (ICs). The 3D power distribution network is modeled and extracted in frequency domain which includes the impact of skin effect. The worst case power noise of the 3D power delivery networks (PDN) with local TSV failures resulting from fabrication process or circuit operation is identified in both frequency and time domain. From the experimental results, it is observed that a single TSV failure could increase the maximum voltage variation up to 70% which should be considered in nanoscale ICs. The parameters of the 3D PDN are designed such that the power distribution is reliable under local TSV failures. The spatial distribution of the power noise, reliability and block out area is analyzed to enhance the reliability of the 3D PDN under local TSV failure.
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