Resistivity of Graphene Nanoribbon Interconnects
Murali, R.
Brenner, K.
Yinxiao Yang
Beck, T.
Meindl, J.D.
Nanotechnol. Res. Center, Georgia Inst. of Technol., Atlanta, GA;
This paper appears in: Electron Device Letters, IEEE
Publication Date: June 2009
Volume: 30,
Issue: 6
On page(s): 611-613
ISSN: 0741-3106
INSPEC Accession Number: 10666151
Digital Object Identifier: 10.1109/LED.2009.2020182
Current Version Published: 2009-05-26
Abstract
Graphene nanoribbon (GNR) interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given linewidth(18 nm < W< 52 nm) is about three times that of a Cu wire, whereas the best GNR has a resistivity that is comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as line-edge roughness scattering; as a result, the best reported GNR resistivity is three times the limit imposed by substrate phonon scattering. This letter reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.
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