Comparison of 2.3-kV Medium-Voltage Multilevel Converters for Industrial Medium-Voltage Drives
Krug, D.
Bernet, S.
Fazel, S.S.
Jalili, K.
Malinowski, M.
Siemens AG Autom. & Drives, Nuremberg;
This paper appears in: Industrial Electronics, IEEE Transactions on
Publication Date: Dec. 2007
Volume: 54,
Issue: 6
On page(s): 2979-2992
ISSN: 0278-0046
INSPEC Accession Number: 9681908
Digital Object Identifier: 10.1109/TIE.2007.906997
Current Version Published: 2007-10-29
Abstract
This paper compares the expense of power semiconductors and passive components of a (2.3 kV, 2.4 MVA) two-level, three-level neutral-point-clamped, three-level flying-capacitor, four-level flying-capacitor, and five-level series-connected H-bridge voltage source converter on the basis of the state-of-the-art 6.5-, 3.3-, 2.5-, and 1.7-kV insulated gate bipolar transistors for industrial medium-voltage drives. The power semiconductor losses, the loss distribution, the installed switch power, the design of flying capacitors, and the components of an sine filter for retrofit applications are considered.
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