A Pseudo Two-Dimensional Subthreshold Surface Potential Model for Dual-Material Gate MOSFETs

An analytical subthreshold surface potential model for dual-material gate MOSFETs, which considers a varying depth of the channel depletion layer due to the difference in Hatband voltages, and also due to the depletion layers around the source/drain junctions, is presented. The model predictions are compared with the predictions by the 2-D numerical device simulator DESSIS, and a very good agreement between the two is observed.