Optimization of the MuGFET performance on Super Critical-Strained SOI (SC-SSOI) substrates featuring raised source/drain and dual CESL

In this paper, we investigate for the first time the impact of raised source/drain on the short channel current enhancement of MuGFET devices on super critical strained SSOI (SC-SSOI). Short channel nMOS drive current can be improved up to 15% and even 50% in the case of high tensile 30 nm SSOI substrates. We also show that SC-SSOI has a higher sensitivity to the mobility boost from tensile contact etch stop layers (CESL). Therefore the combination of both mobility boosters is very beneficial for nMOS MuGFET when used with SEG.