High-Performance Chemical-Bath-Deposited Zinc Oxide Thin-Film Transistors
Redinger, D.
Subramanian, V.
Univ. of California-Berkeley, Berkeley;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: June 2007
Volume: 54,
Issue: 6
On page(s): 1301-1307
Location: Lausanne, Switzerland,
ISSN: 0018-9383
INSPEC Accession Number: 9882360
Digital Object Identifier: 10.1109/TED.2007.895861
Current Version Published: 2007-05-29
Abstract
Solution-processed transparent zinc oxide (ZnO) transistors are demonstrated using a chemical bath deposition process for ZnO deposition. The process is glass compatible and amenable to producing fully transparent electronics. Mobility as high as 3.5 cm2/V ldr s with on-off ratios of ~105 is realized. The transparency of ZnO allows for complete coverage of the pixel by the pixel drive transistors; analysis shows that the performance achieved herein is sufficient even to drive high-brightness organic light-emitting diode (OLED) displays by exploiting the high mobility and optical transparency of these devices. This makes this technology extremely attractive for use in active-matrix OLED display applications.
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