Structural and Optical Characterization of InAs/GaSb nanoscale superlattices for mid-infrared detection

Optimization of various growth parameters for Type-II GaSb(10MLs)/InAs(10MLs) nanoscale superlattices and GaSb layers, grown by solid molecular beam epitaxy, has been undertaken. These include the As/Sb soak times and substrate temperature during the growth. We present optical and structural characterization for these heterostructures, using high resolution X-ray diffraction (HRXRD), photoluminescence (PL) and atomic force microscopy (AFM). Optimized parameters were then used to grow a thick structure suitable for mid-infrared detection.