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Transfers of 2-inch GaN films onto sapphire substrates using Smart Cut^TM technology
Tauzin, A. Akatsu, T. Rabarot, M. Dechamp, J. Zussy, M. Moriceau, H. Michaud, J.F. Charvet, A.M. Di Cioccio, L. Fournel, F. Garrione, J. Faure, B. Letertre, F. Kernevez, N.
Dept. de Recherches sur la Fussion Controlee, CEA, Centre d'Etudes de Grenoble, France;

This paper appears in: Electronics Letters
Publication Date: 26 May 2005
Volume: 41, Issue: 11
On page(s): 668- 670
ISSN: 0013-5194
INSPEC Accession Number: 8480277
Digital Object Identifier: 10.1049/el:20051038
Current Version Published: 2005-06-27

Abstract
For the first time, transfers of thin GaN films by means of the Smart Cut technology were demonstrated. Full wafer transfer of a 2-inch GaN layer from its original substrate onto a carrier sapphire wafer is reported.

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