Evaluation of three-level rectifiers for low-voltage utility applications
Teichmann, R.
Malinowski, M.
Bernet, S.
GE Global Res., Niskayuna, NY, USA;
This paper appears in: Industrial Electronics, IEEE Transactions on
Publication Date: April 2005
Volume: 52,
Issue: 2
On page(s): 471- 481
ISSN: 0278-0046
INSPEC Accession Number: 8351107
Digital Object Identifier: 10.1109/TIE.2005.843908
Current Version Published: 2005-04-04
Abstract
This paper evaluates the benefits of three-level topologies as alternatives to two-level topologies in low-voltage converters primarily operated in rectifier mode. The main evaluation aspects are input filter size, semiconductor losses, maximum switching frequency, part count, initial cost, and life cycle cost. Semiconductor loss characteristics of various three-level topologies are discussed. A detailed converter comparison is based on a 100-kW 400-Vrms rectifier using commercially available Si insulated gate bipolar transistor modules.
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