On the operation configuration of SiGe HBTs based on power gain analysis
Zhenqiang Ma
Ningyue Jiang
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI, USA;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: Feb. 2005
Volume: 52,
Issue: 2
On page(s): 248- 255
ISSN: 0018-9383
INSPEC Accession Number: 8267885
Digital Object Identifier: 10.1109/TED.2004.842541
Current Version Published: 2005-01-24
Abstract
The power gain difference, under different device stability conditions, between common-emitter (CE) and common-base (CB) bipolar junction transistors (BJT) is analyzed comprehensively. The analysis reveals that the CB configuration offers higher maximum available power gain than the CE configuration in the device's high operation frequency range, while the inverse relation holds in the very low frequency range. In the intermediate frequency range, the base resistance value, mainly affected by the base doping concentration, determines which configuration offers higher maximum stable power gain (MSG). These analyses have explicit implications on the operation configurations of SiGe heterojunction bipolar transistors (HBTs). Employing a typical doping profile of Si bipolar junction transistors with a trapezoidal Ge profile in SiGe HBTs usually results in a larger base resistance than the emitter resistance. For these devices, the CE configuration exhibits higher MSG than the CB configuration. Employing a higher base doping concentration than the emitter with a box-type Ge profile considerably reduces the base resistance and thus favors the CB configuration for power amplification in this frequency range. The analysis are quantitatively verified with simulation and measurement results from SiGe HBTs of representative Ge and base doping profiles.
Index
Terms
Available to subscribers and IEEE members.
References
Available to subscribers and IEEE members.
Citing Documents
Available to subscribers and IEEE members.
Cart
