Total dose effects on double gate fully depleted SOI MOSFETs
Bongim Jun
Xiong, H.D.
Sternberg, A.L.
Cirba, C.R.
Dakai Chen
Schrimpf, R.D.
Fleetwood, D.M.
Schwank, J.R.
Cristoloveanu, S.
Vanderbilt Univ., Nashville, TN, USA;
This paper appears in: Nuclear Science, IEEE Transactions on
Publication Date: Dec. 2004
Volume: 51,
Issue: 6, Part 2
On page(s): 3767- 3772
ISSN: 0018-9499
INSPEC Accession Number: 8225525
Digital Object Identifier: 10.1109/TNS.2004.839256
Current Version Published: 2004-12-20
Abstract
Total ionizing dose effects on fully-depleted (FD) silicon-on-insulator (SOI) transistors are studied when the devices are operated in single gate (SG) and double gate (DG) mode. The devices exhibit superiority in mobility and drain current when operated in DG mode compared to SG mode. Moreover, the dc characteristics of DG operated device are less vulnerable to total dose radiation induced damage. In particular, radiation-induced interface traps have less electrical effect in DG mode operation.
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