Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low
Ducret, S.
Saigne, F.
Boch, J.
Schrimpf, R.D.
Fleetwood, D.M.
Vaille, J.R.
Dusseau, L.
David, J.P.
Ecoffet, R.
Univ. de Montpellier, France;
This paper appears in: Nuclear Science, IEEE Transactions on
Publication Date: Dec. 2004
Volume: 51,
Issue: 6, Part 2
On page(s): 3219- 3224
ISSN: 0018-9499
INSPEC Accession Number: 8225468
Digital Object Identifier: 10.1109/TNS.2004.839145
Current Version Published: 2004-12-20
Abstract
The influence of an electrostatic barrier in the oxide bulk on the radiation-induced degradation of bipolar technologies is investigated by performing a thermal annealing operation before switching the dose rate from high to low. It is shown that, in our test conditions, no significant electrostatic barrier effect is at play in the device degradation.
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