Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs
Boch, J.
Saigne, F.
Schrimpf, R.D.
Fleetwood, D.M.
Cizmarik, R.
Zander, D.
Univ. de Reims, France;
This paper appears in: Nuclear Science, IEEE Transactions on
Publication Date: Oct. 2004
Volume: 51,
Issue: 5, Part 3
On page(s): 2903- 2907
ISSN: 0018-9499
INSPEC Accession Number: 8155379
Digital Object Identifier: 10.1109/TNS.2004.835055
Current Version Published: 2004-10-18
Abstract
The effect of high temperature irradiations has been investigated on four types of commercial linear bipolar integrated circuits (ICs) at eight temperatures ranging from 25°C to 150°C for different total doses at a given dose rate. In agreement with results obtained for individual bipolar transistors, the results show that an optimum irradiation temperature exists that leads to a maximum amount of degradation. Results are compared to low dose rate (LDR) irradiations for ICs with npn and pnp input transistors.
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