A three-level MOSFET inverter for low-power drives
Welchko, B.A.
de Rossiter Correa, M.B.
Lipo, T.A.
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI, USA;
This paper appears in: Industrial Electronics, IEEE Transactions on
Publication Date: June 2004
Volume: 51,
Issue: 3
On page(s): 669- 674
ISSN: 0278-0046
INSPEC Accession Number: 8110760
Digital Object Identifier: 10.1109/TIE.2004.825337
Current Version Published: 2004-06-01
Abstract
This paper proposes operating a three-level neutral-point-clamped (NPC) inverter using a two-level pulsewidth-modulation method. This allows for the clamping diodes to be rated at a fraction of the main switches due to their low average current requirement. The use of a bootstrap charge pump as a low-cost method to obtain the isolated gate drive power supplies is extended for use with the NPC topology. Using this control method and circuits, an inverter based on high-volume, low-cost, low-voltage power MOSFETs is experimentally demonstrated as a possible economic alternative to an insulated-gate-bipolar-transistor-based drive for 120-Vrms-supplied systems.
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