Abstract
In this paper, we propose a sensitivity analysis technique for device design. By this method, we determine the linearized variations of the device terminal characteristics following some change either in the impurity distribution, or in device geometry, such as channel length and oxide thickness. This technique has been implemented in our general-purpose two-dimensional device-analysis program, and proved to be very efficient, as only the assembly of the RHS and one back substitution is required in order to achieve the final result. It is believed that the present method can be profitably used for both deterministic and statistical device design.
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