Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances
Iwai, H.
Pinto, M.R.
Rafferty, C.S.
Oristian, J.E.
Dutton, R.W.
Abstract
In order to analyze short-channel effects of MOS transistor ac characteristics, a two-dimensional device simulator has been used to extract MOS transistor capacitances. The results of simulation and measurements agree well. The causes of short-channel effects have been understood and explained by the simulations. Two-dimensional effects and velocity saturation are the main causes of short-channel effects in MOS transistor capacitances. Two-dimensional simulation was found to be a useful tool for studying mobility models, as well as for obtaining capacitance models for circuit simulation.
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