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Semiconductor Device Simulation at NTT
Yokoyama, K.   Tomizawa, M.   Yoshii, A.   Sudo, T.  

This paper appears in: Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publication Date: October 1985
Volume: 4,  Issue: 4
On page(s): 452- 461
ISSN: 0278-0070
Current Version Published: 2004-03-03

Abstract
The current status of semiconductor device simulation at NTT is described. Device simulators at NTT are classified into two categories. One is the conventional macroscopic approach and the other is microscopic particle analysis using a Monte Carlo method. In this paper, these simulators are introduced together with the more interesting results. Through these examples, it is demonstrated that the device simulation takes an important role for accurate modeling of semiconductor devices. This report also concludes that the choosing the best simulation program for a given problem is the key to obtain effectively an accurate solution.

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