Home  |   Login  |   Logout  |   Access Information  |   Alerts  |   Purchase History  |   Cart  |   Sitemap  |   Help   
 
Abstract
BROWSE SEARCH IEEE XPLORE GUIDE SUPPORT
arrow_leftView TOC   |arrow_leftPrevious Article   |  Next Articlearrow_right
Email/Printer Friendly Format  
 

Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device
Mazzone, A.M.   Rocca, G.  

This paper appears in: Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publication Date: January 1984
Volume: 3,  Issue: 1
On page(s): 64- 71
ISSN: 0278-0070
Current Version Published: 2004-03-03

Abstract
Monte Carlo methods are used to simulate implants. The results fall into two different groups. On one side, size-dependent effects due to the presence of the mask are analyzed and discussed. On the other side, physical mechanisms dependent on dose and energy, like channeling and transition crystal-amorphous, are briefly reviewed.

Index Terms
Available to subscribers and IEEE members.

References
Available to subscribers and IEEE members.
Citing Documents
Available to subscribers and IEEE members.
You are not logged in.
Guests may access Abstract records free of charge.
Login
Username
Password
» Forgot your password?
Please remember to log out when you have finished your session.
You must log in to access:
• Advanced or Author Search
• CrossRef Search
• AbstractPlus Records
• Full Text PDF
• Full Text HTML
Access this document
Full Text: PDF (1040 KB)
» Buy this document now
»  Learn more about
»  Learn more about
    purchasing articles
    and standards

Rights and Permissions
» Learn More
Download this citation
Available to subscribers and IEEE members.
 
arrow_leftView TOC   |arrow_leftPrevious Article   |  Next Articlearrow_right   |  Back to toparrow_up
Indexed by IEE Inspec
© Copyright 2009 IEEE – All Rights Reserved