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Radiation-induced charge trapping in thin Al₂O₃/SiO_xN_y/Si(100) gate dielectric stacks
Felix, J.A. Shaneyfelt, M.R. Fleetwood, D.M. Meisenheimer, T.L. Schwank, J.R. Schrimpf, R.D. Dodd, P.E. Gusev, E.P. D'Emic, C.
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA;

This paper appears in: Nuclear Science, IEEE Transactions on
Publication Date: Dec. 2003
Volume: 50, Issue: 6, Part 1
On page(s): 1910- 1918
ISSN: 0018-9499
INSPEC Accession Number: 7942955
Digital Object Identifier: 10.1109/TNS.2003.820763
Current Version Published: 2004-02-06

Abstract
We examine the total-dose radiation response of capacitors and transistors with stacked Al₂O₃ on oxynitride gate dielectrics with Al and poly-Si gates after irradiation with 10 keV X-rays. The midgap voltage shift increases monotonically with dose and depends strongly on both Al₂O₃ and SiO_xN_y thickness. The thinnest dielectrics, of most interest to industry, are extremely hard to ionizing irradiation, exhibiting only ∼50 mV of shift at a total dose of 10 Mrad(SiO₂) for the worst case bias condition. Oxygen anneals are found to improve the total dose radiation response by ∼50% and induce a small amount of capacitance-voltage hysteresis. Al₂O₃/SiO_xN_y dielectrics which receive a ∼1000°C dopant activation anneal trap ∼12% more of the initial charge than films annealed at 550°C. Charge pumping measurements show that the interface trap density decreases with dose up to 500 krad(SiO₂). This surprising result is discussed with respect to hydrogen effects in alternative dielectric materials, and may be the result of radiation-induced hydrogen passivation of some of the near-interfacial defects in these gate dielectrics.

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