On the electron mobility in ultrathin SOI and GOI
Khakifirooz, A.
Antoniadis, D.A.
Microsystems Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA;
This paper appears in: Electron Device Letters, IEEE
Publication Date: Feb. 2004
Volume: 25,
Issue: 2
On page(s): 80- 82
ISSN: 0741-3106
INSPEC Accession Number: 7910772
Digital Object Identifier: 10.1109/LED.2003.822650
Current Version Published: 2004-02-06
Abstract
The mobility of electrons in ultrathin silicon-on-insulator (SOI) and germanium-on-insulator (GOI) is studied. Quantum simulations are carried out to calculate phonon-limited mobility based on the experimental data for bulk. Modulation of the electron population in different ladders is shown to have a constructive effect in (111) Ge, whereas in (100) Ge mobility drops monotonically with either increase of gate bias or by thinning the GOI film.
Index
Terms
Available to subscribers and IEEE members.
References
Available to subscribers and IEEE members.
Citing Documents
Available to subscribers and IEEE members.
Cart
