Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer
Meledin, D.
Tong, C.-Y.E.
Blundell, R.
Kaurova, N.
Smirnov, K.
Voronov, B.
Goltsman, G.
Harvard-Smithsonian Center for Astrophys., Cambridge, MA, USA;
This paper appears in: Applied Superconductivity, IEEE Transactions on
Publication Date: June 2003
Volume: 13,
Issue: 2, Part 1
On page(s): 164- 167
ISSN: 1051-8223
INSPEC Accession Number: 7711531
Digital Object Identifier: 10.1109/TASC.2003.813671
Current Version Published: 2003-07-15
Abstract
In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.
Index
Terms
Available to subscribers and IEEE members.
References
Available to subscribers and IEEE members.
Citing Documents
Available to subscribers and IEEE members.
Cart
