Monolithic transformer with underlying deep silicon-oxide block
Jiang, H.
Tien, N.C.
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY;
This paper appears in: Electronics Letters
Publication Date: 31 Jan 2002
Volume: 38,
Issue: 3
On page(s): 142-144
ISSN: 0013-5194
References Cited: 4
CODEN: ELLEAK
INSPEC Accession Number: 7178755
Digital Object Identifier: 10.1049/el:20020085
Current Version Published: 2002-08-07
Abstract
A method to improve the performance of on-chip monolithic
transformers is presented. A transformer with a 20 μm-deep
silicon-oxide block beneath has a self-resonant frequency of 9.75 GHz
and a quality factor of 10.1. These values are 72 and 124% better,
respectively, than those of the same device built on 4.1 μm-thick
silicon oxide
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