On-chip spiral inductors suspended over deep copper-lined cavities
Hongrui Jiang
Ye Wang
Yeh, J.-L.A.
Tien, N.C.
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY;
This paper appears in: Microwave Theory and Techniques, IEEE Transactions on
Publication Date: Dec 2000
Volume: 48,
Issue: 12
On page(s): 2415-2423
Meeting Date: 06/11/2000 - 06/16/2000
Location: Boston, MA, USA
ISSN: 0018-9480
References Cited: 32
CODEN: IETMAB
INSPEC Accession Number: 6842524
Digital Object Identifier: 10.1109/22.898992
Current Version Published: 2002-08-06
Abstract
A silicon micromachining method has been developed to fabricate
on-chip high-performance suspended spiral inductors. The spiral
structure of an inductor was formed with polysilicon and was suspended
over a 30-μm-deep cavity in the silicon substrate beneath. Copper
(Cu) was electrolessly plated onto the polysilicon spiral to achieve low
resistance. The Cu plating process also metallized the inner surfaces of
the cavity, forming both a good radio-frequency (RF) ground and an
electromagnetic shield. High quality factors (Qs) over 30 and
self-resonant frequencies higher than 10 GHz have been achieved. A study
of the mechanical properties of the suspended inductors indicates that
they can withstand large shock and vibration. Simulation predicts a
reduction of an order of magnitude in the mutual inductance of two
adjacent inductors with the 30-μm-deep Cu-lined cavity from that with
silicon as the substrate. This indicates very small crosstalk between
the inductors due to the shielding effect of the cavities
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