This paper appears in: Microelectromechanical Systems, Journal of
Publication Date: Sep 2000
Volume: 9,
Issue: 3
On page(s): 281-287
ISSN: 1057-7157
References Cited: 31
CODEN: JMIYET
INSPEC Accession Number: 6726362
Digital Object Identifier: 10.1109/84.870052
Current Version Published: 2002-08-06
Abstract
Selective copper encapsulation on silicon has been used to
fabricate micromachined devices such as inductors with quality factors
over 30 at frequencies above 5 GHz. The devices are fabricated using
either polysilicon surface micromachining, or integrated polysilicon and
deep reactive ion etching bulk silicon micromachining. Their exposed
silicon surfaces are selectively activated by palladium activation,
which allows the subsequent copper deposition on the activated silicon
surfaces only. This silicon encapsulated-with-copper technique takes
advantage of both the excellent mechanical properties of silicon (to
maintain structural integrity), and the high conductivity of copper (for
electrical signal transmission). Furthermore, the process not only
minimizes interfacial forces typical of physical metal deposition on
silicon, but also balances the forces by metal encapsulation on all
sides of the silicon structures
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