Thermal stability of IGBT high-frequency operation
Sheng, K.
Finney, S.J.
Williams, B.W.
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh;
This paper appears in: Industrial Electronics, IEEE Transactions on
Publication Date: Feb 2000
Volume: 47,
Issue: 1
On page(s): 9-16
ISSN: 0278-0046
References Cited: 10
CODEN: ITIED6
INSPEC Accession Number: 6507827
Digital Object Identifier: 10.1109/41.824018
Current Version Published: 2002-08-06
Abstract
Thermal stability of high-frequency insulated gate bipolar
transistor (IGBT) operation is studied in this paper. The
nonpunch-through IGBT is found to be stable when operated within its
rated temperature. Thermal runaway occurs with punch-through IGBTs at
temperatures below the maximum junction temperature when operated at
high frequency at well below rated current, with snubber or
soft-switching circuits
Index
Terms
Available to subscribers and IEEE members.
References
Available to subscribers and IEEE members.
Citing Documents
Available to subscribers and IEEE members.
Cart
