Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface
Turin, V.O.
Balandin, A.A.
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA;
This paper appears in: Electronics Letters
Publication Date: 8 Jan. 2004
Volume: 40,
Issue: 1
On page(s): 81- 83
ISSN: 0013-5194
INSPEC Accession Number: 7826666
Digital Object Identifier: 10.1049/el:20040071
Current Version Published: 2004-01-21
Abstract
The authors investigate the effect of the thermal boundary resistance between the GaN layer and the substrate on the current-voltage characteristics of GaN MESFETs. Using material specific models for carrier drift-diffusion and thermal conductivity the authors determine the dependence of the breakdown voltage on thermal boundary resistance. The mechanism of the thermal breakdown in GaN transistors is also discussed. Obtained results can be used for structure optimisation of GaN-based transistors.
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