Comparative multiphysics simulation of VO2 based lateral devices

Due to reaching the end of Moore’s era and minimising CMOS technology becomes difficult. Finding different materials to keep electronic devices evolving is a matter of scientists. A thermal electronic logic circuit (TELC) is one of the most prominent alternatives that has been proposed recently. Vanadium dioxide (VO
2
) is an essential material that has been utilised in TELC due to its thermal and electrical properties. VO
2
transits its electrical property from the semiconductor phase into the metal phase at around 67°C. In this paper, two numerical methods were used to determine the electrical and thermal characteristics of VO
2
, and measured data compared the results. The phase-change material behaviour was modelled by two different softwares using different simulation methods, finite volume method FVM and finite element method FEM. The sample preparation and the thermal and electrical measurements were carried out in our cleanroom.