Specular spectroscopic scatterometry
Xinhui Niu
Jakatdar, N.
Junwei Bao
Spanos, C.J.
Dept. of Electr. Eng., California Univ., Berkeley, CA;
This paper appears in: Semiconductor Manufacturing, IEEE Transactions on
Publication Date: May 2001
Volume: 14,
Issue: 2
On page(s): 97-111
ISSN: 0894-6507
References Cited: 32
CODEN: ITSMED
INSPEC Accession Number: 6928834
Digital Object Identifier: 10.1109/66.920722
Current Version Published: 2002-08-07
Abstract
Scatterometry is one of the few metrology candidates that has true
in situ/in-line potential for deep submicrometer critical dimension (CD)
and profile analysis. Most existing scatterometers are designed to
measure multiple incident angles at a single wavelength on periodic
gratings. We extend this idea by deploying specular spectroscopic
scatterometry. Specular spectroscopic scatterometry (SS) is designed to
measure the zeroth-order diffraction response at a fixed angle of
incidence and multiple wavelengths. This mechanism allows the use of
existing thin-film metrology equipment, such as spectroscopic
ellipsometers, to accurately extract topographic profile information
from one-dimensional (1-D) periodic structures. In this work, we
developed the grating tool-kit (gtk), which implements several variants
of rigorous coupled-wave analysis (RCWA) to accurately and efficiently
simulate diffraction behavior of 1-D gratings. Theoretical simulations
using this package show that specular spectroscopic scatterometry can be
applied in the current semiconductor manufacturing technology, and can
be easily extended to the 0.07-μm generation. We have also applied a
library-based profile extraction methodology to resist and poly
focus-exposure matrices patterned using 0.25and 0.18-μm lithography
and etch technology, respectively, to extract their cross-sectional
profiles. Discrepancies between CD-SEM, CD-AFM, and SSS measurements are
discussed and explained
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