Estimation of band-gap offsets of heterojunctions using J-V-Tcharacteristics
Debbar, N.
Almashary, B.
Dept. of Electr. Eng., King Saud Univ., Riyadh ;
This paper appears in: Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Publication Date: 2000
On page(s): 177-180
Meeting Date: 10/31/2000 - 11/02/2000
Location: Tehran, Iran
ISBN: 964-360-057-2
References Cited: 12
INSPEC Accession Number: 6950631
Digital Object Identifier: 10.1109/ICM.2000.916439
Current Version Published: 2002-08-06
Abstract
This article presents investigation of use of the
current-voltage-temperature characteristics (J-V-T) of an isotype
GaAs-AlGaAs (n-N) structure to estimate its conduction band offset
(ΔEc). The J-V-T characteristics of the heterojunction
are calculated using numerical simulation with different assumed values
for ΔEc. The activation energy (EA) is then
extracted and compared to the assumed value of the offset ΔEc
. The activation energy is found to be in a direct linear relation
with the band offset with a constant that depends on the doping level
and applied bias. Using this process, we show that an n-n+-N
GaAs-GaAs-AlGaAs structure has many advantages in the estimation of the
offset over the simple structure
Index
Terms
Available to subscribers and IEEE members.
References
Available to subscribers and IEEE members.
Citing Documents
Available to subscribers and IEEE members.
Cart
