A 0.18 μm 90 GHz fT SiGe HBT BiCMOS, ASIC-compatible,copper interconnect technology for RF and microwave applications
Freeman, G.
Ahlgren, D.
Greenberg, D.R.
Groves, R.
Huang, F.
Hugo, G.
Jagannathan, B.
Jeng, S.J.
Johnson, J.
Schonenberg, K.
Stein, K.
Volant, R.
Subbanna, S.
IBM Corp., Hopewell Junction, NY;
This paper appears in: Electron Devices Meeting, 1999. IEDM Technical Digest. International
Publication Date: 1999
On page(s): 569-572
Meeting Date: 12/05/1999 - 12/08/1999
Location: Washington, DC, USA
ISBN: 0-7803-5410-9
References Cited: 8
INSPEC Accession Number: 6507006
Digital Object Identifier: 10.1109/IEDM.1999.824218
Current Version Published: 2002-08-06
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We present a self-aligned, 0.18 μm emitter width SiGe HBT with
fT of 90 GHz, fMAX of 90 GHz (both at VCB
=0.5 V), NFMIN of 0.4 dB, and BVCEO of 2.7
V. We also demonstrate that this device is integrable with IBM's 0.18
μm, 1.8/3.3 V copper metallization CMOS technology with little effect
on the CMOS device properties and design rules
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