Using X-ray radiation to erase information from a CMOS programmableread-only memory
Kotov, Yu.A.
Sokovnin, S.Yu.
Skotnikov, V.A.
Inst. of Electrophys., Acad. of Sci., Ekaterinburg ;
This paper appears in: High-Power Particle Beams, 1998. BEAMS '98. Proceedings of the 12th International Conference on
Publication Date: 1998
Volume: 2,
On page(s): 1045-1047 vol.2
Meeting Date: 06/07/1998 - 06/12/1998
Location: Haifa, Israel
ISBN: 0-7803-4287-9
References Cited: 4
INSPEC Accession Number: 6522586
Digital Object Identifier: 10.1109/BEAMS.1998.817033
Current Version Published: 2002-08-06
Abstract
We have investigated the possibility of the use of X-rays to erase
CMOS programmable digital ICs. In the experiment, microcontroller IC Z86
(Zilog) and 87C196KR (Intel) chips, were used. The repetitive pulsed
electron accelerator URT-0.5 was used as an X-ray generator. It produced
7.6 Gy per minute (50 pps) at 5 cm from the anode on the axis, where the
chips were placed. The maximum dose rate was 6.36 kGy/sec. The absorbed
dose was measured using LiF-detectors. Tested chips with special program
in their memory were irradiated until the information had been erased. A
periodic control of the chip memory during the irradiation was
performed. It has been found experimentally that CMOS PROM become free
after irradiation with a dose of about 380 Gy, if it was wrapped up with
10-μm thick Al foil. The foil only connected chip pins. It is
possible to make this erasure procedure with the same chip more than
twice. Irradiation erased chips were successfully tested in the working
device
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