Statistical experimental design in plasma etch modeling
May, G.S.
Huang, J.
Spanos, C.J.
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA;
This paper appears in: Semiconductor Manufacturing, IEEE Transactions on
Publication Date: May 1991
Volume: 4,
Issue: 2
On page(s): 83-98
ISSN: 0894-6507
References Cited: 27
CODEN: ITSMED
INSPEC Accession Number: 3952788
Digital Object Identifier: 10.1109/66.79720
Current Version Published: 2002-08-06
Abstract
The objective of this work is to obtain a comprehensive set of
empirical models for plasma etch rates, uniformity, selectivity, and
anisotropy. These models accurately represent the behavior of a specific
piece of equipment under a wide range of etch recipes, thus making them
ideal for manufacturing and diagnostic purposes. The response
characteristics of a CCl4-based plasma process used to etch
doped polysilicon were examined via a 26-1 fractional
factorial experiment followed by a Box-Wilson design. The effects of
variation in RF power, pressure, electrode spacing, CCl4
flow, He flow and O2 flow on several output variables,
including etch rate, selectivity, and process uniformity, were
investigated. Etch anisotropy was also measured by scanning electron
microscopy analysis on a 26-2 fraction of the original
experiment. The screening factorial experiment was designed to isolate
the most significant input parameters. Using this information as a
platform from which to proceed, the subsequent phase of the experiment
allowed the development of empirical models of etch behavior using
response surface methodology (G. E. P. Box and N. D. Draper, 1987). The
models were subsequently used to optimize the etch process
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