Electrical characterization of ferroelectric YMnO/sub 3/ films for MF(I)S-FET application

As a new ferroelectric material especially for MFSFET's, we have proposed REMnO/sub 3/ (RE:rare earth element), and succeeded to obtain epitaxial films on sapphire and MgO, and oriented films on Pt/sapphire and Si using YMnO/sub 3/ (YMO). The most recent paper described that the YMO on Si with Y-Mn-O buffer layer showed distinct ferroelectric C-V hysteresis with the memory window of 1.1 V, however, the C-V behavior had strong sweeping rate dependence. This paper discusses why the YMO/Si with Y-Mn-O buffer layer shows poor ferroelectric properties, and also shows the improvement of the properties YMO by using Y/sub 2/O/sub 3/ buffer layer.