Electron transport in double-donor systems at Si/SiO2 Interface in SOI-FETs

In this report, we will show the manipulation of donor electronic wave function by applying an electric field across an ultrathin Si channel. Most importantly, we find a sudden change in the transport path in the interface well due to merging of two donor-induced quantum wells formed at the Si/SiO
₂
interface. This finding represents an important step toward the control of electron transport in double-donor systems.