Endurance of Si field emitters prepared by VLS technique

Field emitters, prepared from Si whiskers grown by Vapor-Liquid-Solid (VLS) technique show superior emission performance as compared with other Si-based emitters, due to their shape and high aspect ratio. In this paper the results about the endurance of Si VLS-emitters are first presented. Two types of samples were studied: (1) "tip-on-post" samples for applications as point electron sources and (2) large-area (up to 6 cm) wafer-grown Si FEA. The two types of the samples differ in VLS growth conditions, and as it was found, they have different endurance. The endurance problem can be subdivided in two parts: stability of emitting surface (apex) and endurance (life time) of emitters body during operation and long-term storage.