Moderate inversion: Analog and RF benchmarking with the EKV3 compact model

In this paper the validity of the EKV3 advanced compact MOSFET model is verified with DC and RF measurements of a 90 nm CMOS low-power (LP) process. The model is capable of describing the edge conduction effect, mainly occurring in moderate levels of channel inversion. Non-linearities are extracted from DC measurements and the robustness of the model is also proven, in terms of RF figures of merit (FoM) suitable for RFIC design, for both n- and p-type MOS devices.