A compact model of VES-BJT device

VES-BJT is a bipolar transistor fabricated in the VESTIC technology. Its physical structure differs from other state-of-the-art bipolar transistors: its emitter and collector junctions are not plane-parallel, its base is uniformly doped and the emitter and collector regions are identical. In this paper it is shown how to estimate theoretically the most important parameters of its compact model. Comparison with results of numerical simulation is included, advantages and shortcomings of VES-BJT are discussed.