I. Introduction
For over three decades, scientists have been scaling CMOS devices to increasingly smaller feature sizes to meet requirements on speed, complexity, circuit density and power consumption demanded by many advanced applications. However, going to these ultra-scaled CMOS devices also comes at a cost. Guaranteeing circuit reliability over the entire lifetime of a system is one of the major challenges designers are faced with today [1], [2]. Circuit reliability issues can be categorized into spatial and temporal unreliability effects [2]. The former are related to process variability and are fixed in time and visible right after production. These effects depend on circuit layout, neighboring environment and process conditions, impact the geometry and structure of the circuit and can lead to yield loss. Temporal unreliability effects, on the other hand, are timevarying and change depending on operating conditions such as operating voltage, temperature, switching activity, presence and activity of neighboring circuits.