An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS

We report an ultrashallow metallic source/drain (S/D) contact scheme for fully self-aligned III-V NMOS with specific contact resistivity and sheet resistance which, for the first time, demonstrate performance metrics that may be compatible with the ITRS R
_ext
requirements for 12-nm technology generation device pitch. The record specific contact resistivity between the contact pad and metallic S/D of ρ
_c
= 2.7 ·10
^-9
Ω·cm
²
has been demonstrated for 10 nm undoped InAs channels by forming an ultrashallow crystalline ternary NiInAs phase with R
_sh
= 97 Ω/sq for a junction depth of 7 nm. The junction depth of the S/D scheme is highly controllable and atomically abrupt.