SISSSI-A tool for dynamic electro-thermal simulation of analog VLSI cells

Summary form only given. With the decreasing feature sizes and increasing packaging densities, thermal effects influence more and more the operation of integrated circuits. The accurate consideration of thermal effects while predicting the electrical behaviour of the ICs became crucial in case of high performance integrated circuits both for analog and digital ones. The SISSSI electro-thermal simulator family can be applied for the above purpose, both for analog and digital designs. The common feature of the SISSSI versions (SISSSI-Classic and SISSSI-Logitherm) is that they construct the layout based thermal model of the IC automatically and consider accurately the effect of the chip encapsulation as well. Here we present the developments in the SISSSI-Classic version which is aimed at device level (analog) electro-thermal simulation.