Fully self-consistent simulation of silicon nanocrystal-based single-electron transistors

A three-dimensional (3D) simulator of semiconducting nanocrystal-based single-electron transistors (SETs) is presented. It is based on the self-consistent solution of Poisson and Schrodinger equations. The resulting wave functions are used to compute the bias-dependent tunneling rates in the weak dot to leads coupling limit. These rates are used as input data of a Monte Carlo code which treats the sequential transport of electrons through the tunnel barriers. The simulator was applied to a typical silicon nanocrystal (Si-NC) SET. The resulting I-V
_GS
characteristics and the influence of temperature are discussed in terms of tunneling rates, chemical potentials and wave functions.