Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation

GNR (Graphene NanoRibbon) Tunneling-FETs (GNR-TFETs) are simulated using a Non-Equilibrium Green's Function (NEGF) approach using Extended Hiickel Theory (EHT)-based Hamiltonian. By comparing performance of ribbons with different bandgaps, it is shown that reducing source/drain doping and operating voltage enables low voltage operation of GNR-TFETs with a bandgap of down to 0.5eV, while still keeping small subthreshold swing (less than 60 mV/dec) and high I
on
/I
off
ratio. This also lowers the performance sensitivity on GNR width and enables the application of GNR-TFETs in low-power circuits.