Computational study of InAs/GaAs quantum dot arrays

In this work we have theoretically investigated photon absorption coefficient in ordered InAs/GaAs cubic quantum dot systems. We solved the Schrodinger equation associated with these structures, using a set of 13 × 13 × 13 plane waves at 12,167 equally spaced points of the Q space. We investigated the transitions between minibands arising from the conduction band, taking into account the different effective masses in each material in our calculations. The effects of the strain were included by taking a conduction band offset of 0.5 eV, corresponding to strained InAs in GaAs.