Performance of a discontinuous Galerkin solver for semiconductor boltzmann equations

We present the effectiveness and competitiveness of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson (BP) system describing electron transport in semiconductor devices. In particular, we show that the scheme can maintain reasonable accuracy even with rather coarse meshes, hence providing a good alternative to the traditional DSMC solvers. Comparative studies for one-dimensional devices and simulations on a 2D double gate MOSFET are provided.