Degradation of p-channel power VDMOSFETs under pulsed NBT stress | IEEE Conference Publication | IEEE Xplore
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Degradation of p-channel power VDMOSFETs under pulsed NBT stress

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S. Djorić-Veljković; D. Danković; A. Prijić; I. Manić; V. Davidović; S. Golubović
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Abstract:

Results of pulsed NBT stress-induced threshold voltage instabilities in p-channel power VDMOSFETs are presented and compared with static NBTI results. Optimal frequency a...Show More

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Abstract:

Results of pulsed NBT stress-induced threshold voltage instabilities in p-channel power VDMOSFETs are presented and compared with static NBTI results. Optimal frequency and duty cycle ranges for application of investigated devices are proposed as well.
Published in: 2010 27th International Conference on Microelectronics Proceedings
Date of Conference: 16-19 May 2010
Date Added to IEEE Xplore: 21 June 2010
ISBN Information:
DOI: 10.1109/MIEL.2010.5490448
Conference Location: Nis, Serbia
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